首页 馆藏资源 舆情信息 标准服务 科研活动 关于我们
被代替 GB/T 1555-2009
到馆阅读
收藏跟踪
购买正版
半导体单晶晶向测定方法 Testing methods for determining the orientation of a semiconductor single crystal
发布日期: 2009-10-30
实施日期: 2010-06-01
废止日期: 2024-03-04
本标准规定了半导体单晶晶向X射线衍射定向和光图定向的方法。本标准适用于测定半导体单晶材料大致平行于低指数原子面的表面取向
分类信息
关联关系
研制信息
相似标准/计划/法规
现行
ASTM E82/E82M-14(2019)
Standard Test Method for Determining the Orientation of a Metal Crystal
测定金属晶体取向的标准试验方法
2019-11-01
现行
GB/T 1555-2023
半导体单晶晶向测定方法
Test methods for determining the orientation of a semiconductive single crystal
2023-08-06
现行
GB/T 34210-2017
蓝宝石单晶晶向测定方法
Test method for determining the orientation of sapphire single crystal
2017-09-07
现行
DIN 50433-3
Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering
半导体技术材料测试;用劳厄背散射法测定单晶的取向
1982-04-01
现行
GB/T 37983-2019
晶体材料X射线衍射仪旋转定向测试方法
Testing methods of X-ray diffraction for determining the orientation of crystal materials by rotation
2019-08-30
现行
BS PD IEC/TR 62981-2017
Studies and comparisons of magnetic measurements on grain-oriented electrical steelsheet determined by the single sheet test method and Epstein test method
单板法和爱泼斯坦法测定取向电工钢片磁性测量的研究与比较
2017-08-18
现行
IEC TR 62981-2017
Studies and comparisons of magnetic measurements on grain-oriented electrical steelsheet determined by the single sheet test method and Epstein test method
单板法和爱泼斯坦法测定取向电工钢片磁性测量的研究与比较
2017-05-22
现行
KS C IEC TR 62981
단일강판 시험방법과 엡스타인 시험방법에 의한 방향성 전기강판의 자기 측정의 연구 및 비교
单板法和爱泼斯坦法测定取向电工钢片磁性测量的研究与比较
2021-08-03
现行
ASTM E975-22
Standard Test Method for X-Ray Determination of Retained Austenite in Steel with Near Random Crystallographic Orientation
近随机结晶取向钢中残余奥氏体的X射线测定的标准试验方法
2022-11-01
现行
DIN 50439
Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
半导体技术材料测试;用电容电压法和汞接触法测定单晶半导体材料的掺杂浓度分布
1982-10-01
现行
BS EN 62047-16-2015
Semiconductor devices. Micro-electromechanical devices-Test methods for determining residual stresses of MEMS films. Wafer curvature and cantilever beam deflection methods
半导体器件 微机电设备
2015-07-31
现行
IEC 62047-16-2015
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
半导体器件 - 微机电器件 - 第16部分:确定MEMS膜残余应力的测试方法 - 晶片曲率和悬臂梁偏转方法
2015-03-05
现行
IEC 62047-48-2024
Semiconductor devices - Micro-electromechanical devices - Part 48: Test method for determining solution concentration by optical absorption using MEMS fluidic device
半导体器件.微机电器件.第48部分:使用MEMS流体器件通过光吸收测定溶液浓度的试验方法
2024-06-07
现行
DIN EN 62047-16
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods (IEC 62047-16:2015); German version EN 62047-16:2015
半导体器件.微机电器件.第16部分:测定MEMS薄膜残余应力的试验方法.圆片弯曲和悬臂梁偏转法(IEC 62047-16-2015);德文版EN 62047-16:2015
2015-12-01