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现行 MIL MIL-PRF-19500/683G Amendment 1
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Transistor, Field Effect, N-Channel Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Type 2N7467, JANTXVR, F, G, and H and JANSR, F, G, and H 晶体管 场效应 N沟道辐射硬化 封装(表面安装和载板封装) 2N7467型 JANTCVR F G和H以及JANSR F、G和H
发布日期: 2019-08-27
分类信息
发布单位或类别: 美国-美国军事规范和标准
关联关系
研制信息
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现行
MIL MIL-PRF-19500/614L
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
晶体管 场效应抗辐射N沟道 硅 2N7380和2N7381型 JANTXV和JANS
2018-08-30
现行
MIL MIL-PRF-19500/760 Notice 1-Validation 1
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Encapsulated (Surface Mount Package), Types 2N7579, 2N7581, 2N7583, and 2N7585, JANTXV, and JANS
晶体管 场效应辐射硬化 N沟道 硅 封装(表面安装封装) 2N7579、2N7581、2N7583和2N7585型 JANTSV和JANS
2016-02-26
现行
MIL MIL-PRF-19500/760A Amendment 4
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Encapsulated (Surface Mount Package), Types 2N7579, 2N7581, 2N7583, and 2N7585, JANTXV, and JANS
晶体管 场效应辐射硬化 N沟道 硅 封装(表面安装封装) 2N7579、2N7581、2N7583和2N7585型 JANTSV和JANS
2020-10-02
现行
MIL MIL-PRF-19500/760A Amendment 3
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS
晶体管 场效应辐射硬化 N沟道 硅 封装(表面安装封装) 类型2N7579、2N7581、2N7583和2N7585 JANTXV和JANS
2020-01-27
现行
MIL MIL-PRF-19500/760A Amendment 2
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Encapsulated (Surface Mount Package), Types 2N7579, 2N7581, 2N7583, and 2N7585, JANTXV, and JANS
晶体管 场效应辐射硬化 N沟道 硅 封装(表面安装封装) 2N7579、2N7581、2N7583和2N7585型 JANTSV和JANS
2018-02-27
现行
MIL MIL-PRF-19500/758A Amendment 1
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 辐射硬化N沟道 硅 器件类型2N7609U8和2N7609U7C JANTSV和JANS
2017-07-28
现行
MIL MIL-PRF-19500/777
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7652, QUALITY LEVELS JANTXV AND JANS
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2020-12-09
现行
MIL MIL-PRF-19500/758A
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 抗辐射N沟道 硅 设备类型2N7609U8和2N7609U8C JANTXV和JANS
2015-03-25
现行
MIL MIL-PRF-19500/775C
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7648 QUALITY LEVELS JANTXV AND JANS
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2020-07-06
现行
MIL MIL-PRF-19500/744E Amendment 1
Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXV and JANS
晶体管 场效应 N沟道 辐射硬化 逻辑级硅 封装(表面安装封装) 2N7616型 质量等级JANTXV和JANS
2017-06-28
现行
MIL MIL-PRF-19500/684D Amendment 1(amendment incorporated)
Transistor, Field Effect, Silicon, N-Channel, Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7472, 2N7473, and 2N7474, JANTXVR and JANSR
晶体管 场效应 硅 N沟道 辐射硬化 封装(表面安装和载板封装) 2N7472、2N7473和2N7474型 JANTXVR和JANSR
2009-11-10
现行
MIL MIL-PRF-19500/744E Amendment 3
Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXV and JANS
晶体管 场效应 N沟道 辐射硬化 逻辑级硅 封装(表面安装封装) 2N7616型 质量等级JANTXV和JANS
2019-12-09
现行
MIL MIL-PRF-19500/744E Amendment 2
Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXV and JANS
晶体管 场效应 N沟道 辐射硬化 逻辑级硅 封装(表面安装封装) 2N7616型 质量等级JANTXV和JANS
2018-10-23
现行
MIL MIL-PRF-19500/744E
Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXV and JANS
晶体管 场效应 N沟道 抗辐射 逻辑级硅 封装(表面贴装封装) 2N7616型 质量等级JANTXV和JANS
2016-02-25
现行
MIL MIL-PRF-19500/684H Amendment 1
Transistor, Field Effect, Silicon, N-Channel, Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7472, 2N7473, and 2N7474, JANTXVR and JANSR
晶体管 场效应 硅 N沟道 辐射硬化 封装(表面安装和载板封装) 2N7472、2N7473和2N7474型 JANTXVR和JANSR
2019-11-23
现行
MIL MIL-PRF-19500/684H Amendment 3
Transistor, Field Effect, Silicon, N-Channel, Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7472, 2N7473, and 2N7474, JANTXVR and JANSR
晶体管 场效应 硅 N沟道 辐射硬化 封装(表面安装和载板封装) 2N7472、2N7473和2N7474型 JANTXVR和JANSR
2020-09-11
现行
MIL MIL-PRF-19500/705E
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR
晶体管 场效应抗辐射 N沟道 硅器件类型2N7488T3 2N7489T3和2N7490T3 JANTXVR和JANSR
2014-11-24
现行
MIL MIL-PRF-19500/706A Notice 1-Validation
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR
晶体管 场效应 辐射硬化N沟道 硅 2N7497T2、2N7498T2、2N7499T2和2N7561T2型JANTXFR和JANSR
2010-02-24
现行
MIL MIL-PRF-19500/685D Amendment 1(amendment incorporated)
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅 器件类型2N7475、2N7476和2N7477 JANTXVR和JANSR
2009-11-11
现行
MIL MIL-PRF-19500/685H Amendment 3
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅 器件类型2N7475、2N7476和2N7477 JANTXVR和JANSR
2020-09-30