本规范涵盖了N沟道、增强模式、抗辐射（总剂量和单事件效应（见））、低阈值逻辑电平、MOSFET、晶体管的性能要求。每个封装设备具有雪崩能量最大额定值（EAS）和最大雪崩电流（IAS），提供两级产品保证（JANTXV和JANS）。为JANTXV和JANS产品保证等级提供了两个辐射等级（‰ÛÏR۝和‰࢕F‰）的辐射硬度保证（RHA）规定。JANHC和JANKC模具版本见6.7。

This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels (‰ÛÏR‰Û and ‰ÛÏF‰Û) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.