现行

MIL MIL-PRF-19500/744E Amendment 1

Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXV and JANS
晶体管 场效应 N沟道 辐射硬化 逻辑级硅 封装（表面安装封装） 2N7616型 质量等级JANTXV和JANS

2017-06-28

现行

MIL MIL-PRF-19500/744E Amendment 3

Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXV and JANS
晶体管 场效应 N沟道 辐射硬化 逻辑级硅 封装（表面安装封装） 2N7616型 质量等级JANTXV和JANS

2019-12-09

现行

MIL MIL-PRF-19500/744E

Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXV and JANS
晶体管 场效应 N沟道 抗辐射 逻辑级硅 封装（表面贴装封装） 2N7616型 质量等级JANTXV和JANS

2016-02-25

现行

MIL MIL-PRF-19500/777

TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7652, QUALITY LEVELS JANTXV AND JANS
晶体管 场效应抗辐射 N沟道 硅 2N7652型 质量等级JANTXV和JANS

2020-12-09

现行

MIL MIL-PRF-19500/775C

TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7648 QUALITY LEVELS JANTXV AND JANS
晶体管 场效应辐射硬化 N沟道 硅 2N7648型质量等级JANTXV和JANS

2020-07-06

现行

MIL MIL-PRF-19500/776

TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7650 AND 2N7651, QUALITY LEVELS JANTXV AND JANS
晶体管 场效应抗辐射 N沟道 硅 2N7650和2N7651型 质量等级JANTXV和JANS

2020-12-09

现行

MIL MIL-PRF-19500/752A

Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Type 2N7608T2, JANTXVR, JANTXVF, JANSR, and JANSF
半导体器件 场效应晶体管 N沟道 抗辐射（总剂量和单事件效应） 逻辑级硅 2N7608T2型 JANTXVR JANTXVF JANSR和JANSF

2017-12-13

现行

MIL MIL-PRF-19500/752A Amendment 1

Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Type 2N7608T2, JANTXVR, JANTXVF, JANSR, and JANSF
半导体器件 场效应晶体管 N沟道 辐射硬化（总剂量和单事件效应） 逻辑电平硅 2N7608T2型 JANTXVR JANTXFF JANSR和JANSF

2018-08-22

现行

MIL MIL-PRF-19500/614L

Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
晶体管 场效应抗辐射N沟道 硅 2N7380和2N7381型 JANTXV和JANS

2018-08-30

现行

MIL MIL-PRF-19500/759

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Dual Transistor, N-Channel and P-Channel, Logic-Level Silicon Types 2N7632UD, JANTXVR, F, and JANSR, F
半导体器件 场效应辐射硬化（总剂量和单事件效应）双晶体管 N沟道和P沟道 逻辑电平硅类型2N7632UD JANTXVR F和JANSR F

2011-06-01

现行

MIL MIL-PRF-19500/759A Notice 1-Validation

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Dual Transistor, N-Channel and P-Channel, Logic-Level Silicon Types 2N7632UD, JANTXVR, F, and JANSR, F
半导体器件 场效应抗辐射（总剂量和单粒子效应）双管 N沟道和P沟道 逻辑级硅类型2N7632UD JANTXVR F和JANSR F

2016-10-25

现行

MIL MIL-PRF-19500/758A Amendment 1

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 辐射硬化N沟道 硅 器件类型2N7609U8和2N7609U7C JANTSV和JANS

2017-07-28

现行

MIL MIL-PRF-19500/758A

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 抗辐射N沟道 硅 设备类型2N7609U8和2N7609U8C JANTXV和JANS

2015-03-25

现行

MIL MIL-PRF-19500/705E

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR
晶体管 场效应抗辐射 N沟道 硅器件类型2N7488T3 2N7489T3和2N7490T3 JANTXVR和JANSR

2014-11-24

现行

MIL MIL-PRF-19500/706A Notice 1-Validation

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR
晶体管 场效应 辐射硬化N沟道 硅 2N7497T2、2N7498T2、2N7499T2和2N7561T2型JANTXFR和JANSR

2010-02-24

现行

MIL MIL-PRF-19500/685D Amendment 1(amendment incorporated)

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅 器件类型2N7475、2N7476和2N7477 JANTXVR和JANSR

2009-11-11

现行

MIL MIL-PRF-19500/685H Amendment 3

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅 器件类型2N7475、2N7476和2N7477 JANTXVR和JANSR

2020-09-30

现行

MIL MIL-PRF-19500/705E Amendment 1

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅器件类型2N7488T3、2N7489T3和2N7490T3 JANTXVR和JANSR

2019-07-17

现行

MIL MIL-PRF-19500/685F

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应抗辐射 N沟道 硅 器件类型2N7475 2N7476和2N7477 JANTXVR和JANSR

2013-05-06

现行

MIL MIL-PRF-19500/705B Amendment 1(amendment incorporated)

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR
晶体管 场效应抗辐射 N沟道 硅器件类型2N7488T3 2N7489T3和2N7490T3 JANTXVR和JANSR

2010-01-21