MIL MIL-PRF-19500/706A Notice 1-Validation-晶体管场效应辐射硬化N沟道硅 2N7497T2、2N7498T2、2N7499T2和2N7561T2型JANTXFR和JANSR-国家数字标准馆

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Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR 晶体管场效应辐射硬化N沟道硅 2N7497T2、2N7498T2、2N7499T2和2N7561T2型JANTXFR和JANSR

发布日期： 2010-02-24

本规范涵盖了N沟道、增强模式、MOSFET、辐射硬化（总剂量和单事件效应（SEE））、具有雪崩能量最大额定值（Eas）和最大雪崩电流（Ias）的功率晶体管在特定功率开关应用中的性能要求。为每种封装设备类型提供两个级别的产品保证（JANTSV和JANS）。

This specification covers the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias) for use in particular power-switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type.

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发布单位或类别：美国-美国军事规范和标准

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