首页 馆藏资源 舆情信息 标准服务 科研活动 关于我们
现行 MIL MIL-PRF-19500/776
到馆提醒
收藏跟踪
购买正版
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7650 AND 2N7651, QUALITY LEVELS JANTXV AND JANS 晶体管 场效应抗辐射 N沟道 硅 2N7650和2N7651型 质量等级JANTXV和JANS
发布日期: 2020-12-09
MIL-PRF-19500/776涵盖了N沟道、增强模式、MOSFET、抗辐射(总剂量和单粒子效应(见))功率晶体管的性能要求。为每个封装设备提供两级产品保证(JANTXV和JANS)。JANTXV和JANS产品保证等级提供了两个辐射等级(“R”和“F”)的辐射硬度保证(RHA)规定。
MIL-PRF-19500/776 covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANS product assurance level.
分类信息
发布单位或类别: 美国-美国军事规范和标准
关联关系
研制信息
相似标准/计划/法规
现行
MIL MIL-PRF-19500/614L
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
晶体管 场效应抗辐射N沟道 硅 2N7380和2N7381型 JANTXV和JANS
2018-08-30
现行
MIL MIL-PRF-19500/758A Amendment 1
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 辐射硬化N沟道 硅 器件类型2N7609U8和2N7609U7C JANTSV和JANS
2017-07-28
现行
MIL MIL-PRF-19500/777
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7652, QUALITY LEVELS JANTXV AND JANS
晶体管 场效应抗辐射 N沟道 硅 2N7652型 质量等级JANTXV和JANS
2020-12-09
现行
MIL MIL-PRF-19500/758A
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS
晶体管 场效应 抗辐射N沟道 硅 设备类型2N7609U8和2N7609U8C JANTXV和JANS
2015-03-25
现行
MIL MIL-PRF-19500/775C
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7648 QUALITY LEVELS JANTXV AND JANS
晶体管 场效应辐射硬化 N沟道 硅 2N7648型质量等级JANTXV和JANS
2020-07-06
现行
MIL MIL-PRF-19500/705E
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR
晶体管 场效应抗辐射 N沟道 硅器件类型2N7488T3 2N7489T3和2N7490T3 JANTXVR和JANSR
2014-11-24
现行
MIL MIL-PRF-19500/706A Notice 1-Validation
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR
晶体管 场效应 辐射硬化N沟道 硅 2N7497T2、2N7498T2、2N7499T2和2N7561T2型JANTXFR和JANSR
2010-02-24
现行
MIL MIL-PRF-19500/685D Amendment 1(amendment incorporated)
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅 器件类型2N7475、2N7476和2N7477 JANTXVR和JANSR
2009-11-11
现行
MIL MIL-PRF-19500/685H Amendment 3
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅 器件类型2N7475、2N7476和2N7477 JANTXVR和JANSR
2020-09-30
现行
MIL MIL-PRF-19500/705E Amendment 1
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR
晶体管 场效应辐射硬化 N沟道 硅器件类型2N7488T3、2N7489T3和2N7490T3 JANTXVR和JANSR
2019-07-17
现行
MIL MIL-PRF-19500/685F
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types 2N7475, 2N7476, and 2N7477 JANTXVR and JANSR
晶体管 场效应抗辐射 N沟道 硅 器件类型2N7475 2N7476和2N7477 JANTXVR和JANSR
2013-05-06
现行
MIL MIL-PRF-19500/705B Amendment 1(amendment incorporated)
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, and 2N7490T3, JANTXVR and JANSR
晶体管 场效应抗辐射 N沟道 硅器件类型2N7488T3 2N7489T3和2N7490T3 JANTXVR和JANSR
2010-01-21
现行
MIL MIL-PRF-19500/706C
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR
晶体管 场效应 抗辐射N沟道 硅 2N7497T2 2N7498T2 2N7499T2和2N7561T2型JANTXVR和JANSR
2015-02-06
现行
MIL MIL-PRF-19500/706C Amendment 1
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Types 2N7497T2, 2N7498T2, 2N7499T2, and 2N7561T2 JANTXVR and JANSR
晶体管 场效应 辐射硬化N沟道 硅 2N7497T2、2N7498T2、2N7499T2和2N7561T2型JANTXFR和JANSR
2020-05-14
现行
MIL MIL-PRF-19500/657B Notice 1-Validation 1
Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 辐射硬化 晶体管管芯 N和P沟道 各种类型的硅JANHC和JANKC
2015-12-09
现行
MIL MIL-PRF-19500/657C
Semiconductor Device, Field Effect, Radiation Hardened, Transistor Die, N and P-Channel, Silicon Various Types JANHC and JANKC
半导体器件 场效应 抗辐射 晶体管管芯 N沟道和P沟道 硅各种类型的JANHC和JANKC
2020-03-10
现行
MIL MIL-PRF-19500/632B Notice 1-Validation
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R
2011-07-15
现行
MIL MIL-PRF-19500/704F Amendment 1
Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel, Silicon, Types 2N7485U3, 2N7486U3, 2N7487U3, and 2N7555U3 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅 2N7485U3、2N7486U3、2N7487U3和2N7555U3型JANTXVR和JANSR
2019-07-17
现行
MIL MIL-PRF-19500/675F Amendment 2
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
半导体器件 场效应辐射硬化晶体管 N沟道 硅类型2N7463T2 2N7464T2 2N7423U5和2N7464U5 JANTXVR和JANSR
2019-12-12
现行
MIL MIL-PRF-19500/632C Notice 1-Validation 1
Semiconductor Device, Field Effect Radiation Hardened Transistors, N-Channel Silicon, Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and R
半导体器件 场效应辐射硬化晶体管 N沟道硅 2N7399、2N7400、2N7401和2N7402型 JANSD和R
2019-02-26