本规范涵盖了具有抗辐射总剂量和单事件（见）效应额定值、雪崩能量最大额定值（EAS）和最大雪崩电流（IAS）的N沟道增强型功率MOSFET晶体管的性能要求。为每个封装设备提供两级产品保证（JANTXV和JANS）。为JANTXV和JANS产品保证等级提供了四个辐射等级（“R”、“F”、“G”|和“H”）的辐射硬度保证（RHA）规定。JANHC和JANKC模具版本见6.7。

This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G"|and "H") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.