现行

GB/T 30866-2014

碳化硅单晶片直径测试方法
Test method for measuring diameter of monocrystalline silicon carbide wafers

2014-07-24

现行

SJ/T 11503-2015

碳化硅单晶抛光片表面粗糙度的测试方法
Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers

2015-04-30

现行

GB/T 31351-2014

碳化硅单晶抛光片微管密度无损检测方法
Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers

2014-12-31

现行

GB/T 30868-2014

碳化硅单晶片微管密度的测定 化学腐蚀法
Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching

2014-07-24

现行

GB/T 30867-2014

碳化硅单晶片厚度和总厚度变化测试方法
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers

2014-07-24

现行

GB/T 41765-2022

碳化硅单晶位错密度的测试方法
Test method for dislocation density of monocrystalline silicon carbide

2022-10-12

现行

SJ/T 11499-2015

碳化硅单晶电学性能的测试方法
Test method for measuring electrical properties of monocrystalline silicon carbide

2015-04-30

现行

SJ/T 11501-2015

碳化硅单晶晶型的测试方法
Test method for determining crystal type of monocrystalline silicon carbide

2015-04-30

现行

SJ/T 11500-2015

碳化硅单晶晶向的测试方法
Test method for measuring crystallographic orientation of monocrystalline silicon carbide

2015-04-30

现行

SJ/T 11504-2015

碳化硅单晶抛光片表面质量的测试方法
Test method for measuring surface quality of polished monocrystalline silicon carbide

2015-04-30

现行

GB/T 42271-2022

半绝缘碳化硅单晶的电阻率非接触测试方法
Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement

2022-12-30

现行

GB/T 42902-2023

碳化硅外延片表面缺陷的测试 激光散射法
Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method

2023-08-06

现行

GB/T 19922-2005

硅片局部平整度非接触式标准测试方法
Standard test methods for measuring site flatness on silicon wafers by noncontact scanning

2005-09-19

现行

GB/T 13387-2009

硅及其它电子材料晶片参考面长度测量方法
Test method for measuring flat length wafers of silicon and other electronic materials

2009-10-30

现行

GB/T 43313-2023

碳化硅抛光片表面质量和微管密度的测试 共焦点微分干涉法
Test method for surface quality and micropipe density of polished silicon carbide wafers—Confocal and differential interferometry optics

2023-11-27

现行

GB/T 29507-2013

硅片平整度、厚度及总厚度变化测试 自动非接触扫描法
Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning

2013-05-09

现行

BS IEC 63068-3-2020

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则

2020-07-24

现行

BS IEC 63068-2-2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则

2019-02-08

现行

IEC 63068-3-2020

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法

2020-07-13

现行

GB/T 43493.3-2023

半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence

2023-12-28