碳化硅外延片表面缺陷的测试 激光散射法
Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method

2023-08-06

碳化硅外延层深能级缺陷的测试 瞬态电容法

2024-02-27

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则

2019-05-10

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则

2020-07-24

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则

2019-02-08

碳化硅单晶抛光片表面质量的测试方法
Test method for measuring surface quality of polished monocrystalline silicon carbide

2015-04-30

碳化硅单晶抛光片表面粗糙度的测试方法
Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers

2015-04-30

半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects

2023-12-28

半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection

2023-12-28

半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence

2023-12-28

碳化硅单晶抛光片位错密度的测试方法

2021-09-15

碳化硅抛光片表面质量和微管密度的测试 共焦点微分干涉法
Test method for surface quality and micropipe density of polished silicon carbide wafers—Confocal and differential interferometry optics

2023-11-27

碳化硅单晶抛光片表面质量和微管密度测试方法 ——共焦点微分干涉光学法

2019-12-27

Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第2部分:光学检验缺陷的试验方法

2019-01-30

碳化硅单晶抛光片表面质量和微管密度检测方法-激光散射检测法

2019-12-27

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法

2020-07-13

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第4部分:使用光学检查和光致发光组合方法识别和评估缺陷的程序

2022-07-27