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现行 IEC 62047-26:2016
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Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures 半导体器件 - 微机电器件 - 第26部分:微沟槽和针结构的描述和测量方法
发布日期: 2016-01-07
IEC 62047-26:2016规定了微米级沟槽结构和针结构的说明。此外,还提供了两种结构的几何测量示例。对于沟槽结构,本标准适用于深度为1μm至100μm的结构;墙壁和沟槽的宽度分别为5μm至150μm;长宽比为0006 7:20。对于针形结构,本标准适用于具有三个或四个面的结构,其高度、水平宽度和垂直宽度为2μm或更大,且尺寸适合侧面为100μm的立方体。 本标准适用于MEMS的结构设计和MEMS加工后的几何评估。
IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures. For trench structures, this standard applies to structures with a depth of 1 μm to 100 μm; walls and trenches with respective widths of 5 μm to 150 μm; and aspect ratio of 0,006 7 to 20. For needle structures, the standard applies to structures with three or four faces with a height, horizontal width and vertical width of 2 μm or larger, and with dimensions that fit inside a cube with sides of 100 μm. This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.
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归口单位: TC 47/SC 47F
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