ISO 17560:2014规定了二次离子质谱方法，使用磁扇形或四极质谱仪对硅中的硼进行深度剖析，并使用触针轮廓术或光学干涉法进行深度刻度校准。该方法适用于硼原子浓度在1 × 1016原子/cm3和1 × 1020原子/cm3之间的单晶、多晶或非晶硅样品，以及50 nm或更深的凹坑深度。

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 10¹⁶ atoms/cm³ and 1 × 10²⁰ atoms/cm³, and to crater depths of 50 nm or deeper.