中子辐照试验用于确定半导体器件对非电离能量损失（NIEL）退化的敏感性。本文所述测试适用于集成电路和分立半导体器件，并用于军事和航空航天相关应用。这是一次破坏性的试验。 测试目标如下: a） 检测和测量关键半导体器件参数随中子注量的变化，以及b）确定在暴露于规定水平的中子注量后，规定的半导体器件参数是否在规定限值内（见第6条）。 交叉引用:ASTM E 265ASTM E 264ASTM E 263ASTM E 721MIL-STD-883ASTM E 1018ASTM E 722ASTM E 720ASTM E 668ASTM E 2450购买本文件时提供的所有当前修订版均包含在购买本文件中。

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, andb) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).Cross References:ASTM E 265ASTM E 264ASTM E 263ASTM E 721MIL-STD-883ASTM E 1018ASTM E 722ASTM E 720ASTM E 668ASTM E 2450All current amendments available at time of purchase are included with the purchase of this document.