本规范涵盖了N沟道、增强模式、MOSFET、辐射硬化（总剂量和单事件效应（SEE））、功率晶体管的性能要求。为每个封装器件提供两个级别的产品保证（JANTSV和JANS），具有雪崩能量最大额定值（Eas）和最大雪崩电流（Ias）。为JANS和JANTXV产品保证级别提供了四个辐射级别（“R”、“F”、“G”和“H”）的辐射硬度保证（RHA）规定。

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (Eas) and maximum avalanche current (Ias). Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G" and "H") are provided for JANS and JANTXV product assurance levels.