1.1 本指南提供半导体和相关设备的射线照片插图。低功率晶体管（通过TO-11外壳配置）、二极管、低功率整流器、功率器件和集成电路以常见的装配特征进行了说明。这些装置的特殊施工区域详细说明了设计或装配的关键点。 1.2 本标准并不旨在解决与其使用相关的所有安全问题（如有）。本标准的使用者有责任在使用前制定适当的安全、健康和环境实践，并确定监管限制的适用性。 1.3 本国际标准是根据世界贸易组织技术性贸易壁垒（TBT）委员会发布的《关于制定国际标准、指南和建议的原则的决定》中确立的国际公认标准化原则制定的。 =====意义和用途====== 4.1 本指南中提供的插图旨在用作参考，以帮助解释x射线检查产生的胶片或非胶片图像（参见 表1 )确定装配质量和工艺。 4.2 未提供设计特征或其他构造细节的所需属性，但应根据这些设备制造商和用户的共同约定确定。许多设备共享共同的装配功能；因此，这些解释可以用于未示出的组件。

1.1 This guide provides illustrations of radiographs of semiconductors and related devices. Low powered transistors (through the TO-11 case configuration), diodes, low-power rectifiers, power devices, and integrated circuits are illustrated with common assembly features. Particular areas of construction are featured for these devices detailing critical points of design or assembly. 1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. 1.3 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee. ====== Significance And Use ====== 4.1 Illustrations provided in this guide are intended for use as references to aid in interpreting film or nonfilm images resulting from x-ray examinations (see Table 1 ) to ascertain quality of assembly and workmanship. 4.2 Required attributes of the design features or other construction details are not provided but are to be established as mutually agreed upon by manufacturers and users of these devices. Many devices share common assembly features; thus, these interpretations can be used for components not illustrated.